Two-dimensional electron gases in low-pressure metalorganic vapour phase epitaxially grown InGaP homojunctions
نویسنده
چکیده
We present modulation-doped ordered-InGaP/disordered-InGaP homojunctions grown, lattice matched to GaAs, by metalorganic vapour phase epitaxy. Capacitance—voltage (C—V) profiling techniques, temperature-dependent Hall, Shubnikov—De Haas and photoluminescence measurements have been used for characterization. The C—V measurements show a narrow profile at the homointerface with an order of magnitude reduction in carrier density within 3 nm. From temperature dependent Hall measurements, typical two-dimensional behaviour is observed with sheet carrier densities as high as 3.6 x 1013 cm2 (T < 100 K). No carrier freeze-out and constant mobilities around 850 cm2 V~~ below T= 100 K are observed. The 300 K channel conductivity of this new type of junction is 3.2 x io~Q1, which is higher than reported in other two-dimensional electron gases. Shubnikov—De Haas measurements indicate the presence of two occupied excited subbands. The photoluminescence measurements clearly show a moving emission which involves the 2DEG.
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تاریخ انتشار 2016